ESTIMATION OF ION INCIDENT ANGLE FROM SI ETCHING PROFILES

被引:13
作者
GOTOH, Y
KURE, T
TACHI, S
机构
[1] Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 6B期
关键词
ION INCIDENT ANGLE DISTRIBUTION; SI ETCHING; OVERHANGING MASK STRUCTURE; MICROWAVE PLASMA ETCHER; ASPECT-RATIO DEPENDENCE;
D O I
10.1143/JJAP.32.3035
中图分类号
O59 [应用物理学];
学科分类号
摘要
The distribution of angles of incident etching ions was measured using a test sample having an overhanging mask structure. The standard deviation of ion incident angles decreased with decreasing pressure of the etching atmosphere. With conventional reactive ion etchers, standard deviations of 3 to 8-degrees were measured at pressures from 2.6 to 101 Pa. With a microwave plasma etcher, the measured deviation at 1.3 Pa was 2-degrees. The aspect-ratio dependence of etching with SF6 may be caused by the insufficient radical supply, which becomes the rate-determining step for etching a high-aspect-ratio trench.
引用
收藏
页码:3035 / 3039
页数:5
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