PATTERN PROFILE CONTROL OF POLYSILICON PLASMA-ETCHING

被引：12

作者：

KIMIZUKA, M

HIRATA, K

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 01期

关键词：

D O I：

10.1116/1.583203

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：16 / 19

页数：4

共 14 条

[1] EDGE PROFILES IN THE PLASMA-ETCHING OF POLYCRYSTALLINE SILICON [J].

ADAMS, AC ;

CAPIO, CD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (02) :366-370

[2] UNDERCUT IN A CF4-BASED HIGH-PRESSURE POLY-SI PLASMA ETCH [J].

BORGHESANI, AF ;

MORI, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (04) :712-718

[3] PLANAR PLASMA-ETCHING OF POLYSILICON USING CCL4 AND NF3 [J].

BOWER, DH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) :795-799

[4] PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J].

COBURN, JW ;

WINTERS, HF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :391-403

[5] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J].

EPHRATH, LM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) :1419-1421

[6] DRY ETCHING TECHNOLOGY FOR 1-MU-M VLSI FABRICATION [J].

HIRATA, K ;

OZAKI, Y ;

ODA, M ;

KIMIZUKA, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) :1323-1331

[7] POLYSILICON ETCHING AND PROFILE CONTROL IN A CCL4-O2 PLASMA [J].

KORMAN, CS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :476-479

[8] PROFILE CONTROL OF POLYSILICON LINES WITH AN SF6/O2 PLASMA ETCH PROCESS [J].

LIGHT, RW ;

BELL, HB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (07) :1567-1571

[9]

MATSUO S, 1979, 1ST P S DRYPR, P13

[10] ANISOTROPIC-PLASMA ETCHING OF POLYSILICON [J].

MOGAB, CJ ;

LEVINSTEIN, HJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (03) :721-730

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