UNDERCUT IN A CF4-BASED HIGH-PRESSURE POLY-SI PLASMA ETCH

被引：3

作者：

BORGHESANI, AF ^{[1
]}

MORI, F ^{[1
]}

机构：

[1] VLSI TECHNOL & PROC,SGS SEMICOND COMPONENTS,MILAN,ITALY

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1983年 / 22卷 / 04期

关键词：

D O I：

10.1143/JJAP.22.712

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：712 / 718

页数：7

共 18 条

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