ACCELERATION OF PLASMA ETCH RATE CAUSED BY ALKALINE RESIDUES

被引：18

作者：

MAKINO, T

NAKAMURA, H

ASANO, M

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 01期

关键词：

D O I：

10.1149/1.2127347

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：103 / 106

页数：4

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[9] ETCHING CHARACTERISTICS OF PHOSPHORUS CONTAINING POLYCRYSTALLINE SILICON IN A CF4 PLASMA [J].

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