A TWO-DIMENSIONAL ETCHING PROFILE SIMULATOR - ESPRIT

被引：19

作者：

YAMAMOTO, S

KURE, T

OHGO, M

MATSUZAMA, T

TACHI, S

SUNAMI, H

机构：

[1] Hitachi Ltd, Kokubunji, Jpn, Hitachi Ltd, Kokubunji, Jpn

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1987年 / 6卷 / 03期

关键词：

COMPUTER SIMULATION;

D O I：

10.1109/TCAD.1987.1270287

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A two-dimensional etching simulator named ESPRIT has been developed to simulate LSI patterning. The etching simulator includes isotropic and anisotropic components. Its calculation method is based on the string model. ESPRIT can simulate etched profiles for multilayers with different etching rates and calculate side etching using sloped incidental anisotropic components. In addition, location correction, loop elimination, point insertion, and point elimination are provided for stable and accurate calculations. Simulated profiles coincide well with those from experiments in terms of relationship between the groove width and etched depth. ESPRIT can be used to support the LSI design patterning process.

引用

页码：417 / 422

页数：6

共 12 条

[1]

ARIKADO T, 1985, NOV P S DRY PROC, P114

[2]

COLINGE J, 1981, DEC IEEE IEDM, P557

[3] OXIDATION-INDUCED STRESS IN A LOCOS STRUCTURE [J].