ELECTRON-SPIN-RESONANCE IN IN0.53GA0.47AS

We report far-infrared photoconductivity measurements under magnetic field on a high-quality In0.53Ga0.47As epitaxial layer having a thickness of 5 mu m and a small lattice mismatch with the InP substrate (Delta a/a = -7 x 10(-4)). The transition between spin-split Landau levels 0(+) and 0(-) ('spin-flip' transition) could be observed, leading to a precise determination of the energy spacing between these two levels, and hence of the electron effective g-factor g(c). Comparison with a theoretical model taking into account interactions between conduction and valence bands in a k . p formalism (Weiler M H et al 1978 Phys. Rev. B 17 3269) leads to a value of g(c) = -4.04 +/- 0.02, and Kane interband matrix element E(p) = 24.0 +/- 0.3 eV.