SILICON AND SILICON-DIOXIDE PROCESSING FOR HIGH-FREQUENCY MESFET PREPARATION

被引：10

作者：

MOHR, TO

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1970年 / 14卷 / 02期

关键词：

D O I：

10.1147/rd.142.0142

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

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页码：142 / &

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[1] ALEXANDER EG, 1966, T METALL SOC AIME, V236, P284
[2] DYNAMIC PERFORMANCE OF SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS
DRANGEID, KE
SOMMERHA.R
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 82 - &
[3] PROJECTION MASKING, THIN PHOTORESIST LAYERS AND INTERFERENCE EFFECTS
MIDDELHOEK, S
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 117 - +
[4] METALLIZATION PROCESSES IN FABRICATION OF SCHOTTKY-BARRIER FETS
MIDDELHOEK, S
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 148 - +
[5] COMPLEMENTARY MOS FIELD-EFFECT TRANSISTORS ON HIGH-RESISTIVITY SILICON SUBSTRATES
RICHMAN, P
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (05) : 377 - &
[6] SIRTL E, 1961, Z METALLKD, V52, P529
[7] SILICON AND GALLIUM ARSENIDE FIELD-EFFECT TRANSISTORS WITH SCHOTTKY-BARRIER GATE
STATZ, H
VONMUNCH, W
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (02) : 111 - &
[8] VICTORIA B, 1969, SOLID STATE ELECTRON, V12, P349
[9] MICROWAVE PROPERTIES OF SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS
WOLF, P
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 125 - +