PROPERTIES OF TWIN BOUNDARIES IN SILICON

被引：20

作者：

QUEISSER, HJ

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1963年 / 110卷 / 01期

关键词：

D O I：

10.1149/1.2425671

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：52 / 56

页数：5

共 24 条

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[3]

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[7] GROWTH OF SILICON CRYSTALS FREE FROM DISLOCATIONS [J].

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JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) :459-474

[8] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J].

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[9]

HAASEN P, 1958, HALBLEITERPROBLEME, V4, P68

[10]

HOOPER W, 1962, B AM PHYS SOC, V7, P211

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