AUGER CRATER-EDGE PROFILING OF MULTILAYER THIN-FILMS BY SCANNING AUGER-SPECTROSCOPY

被引:10
作者
WANG, YX
CUI, YD
CHEN, ZG
LAMBERS, E
HOLLOWAY, PH
机构
[1] CHINESE ACAD SCI,SURFACE PHYS ACAD,BEIJING,PEOPLES R CHINA
[2] UNIV FLORIDA,DEPT MAT SCI & ENGN,GAINESVILLE,FL 32611
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 03期
关键词
D O I
10.1116/1.576743
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Multilayer Tb/Si thin films and AlAs/GaAs semiconductor superlattice thin films have been examined using an Auger crater-edge profiling technique. The data show that the true thickness of layers (in length rather than sputtering times) and differential sputtering ratios for different materials can be rapidly determined from the crater-edge profiles. © 1990, American Vacuum Society. All rights reserved.
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页码:2241 / 2245
页数:5
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