CORRECT SUBSTRATE-TEMPERATURE MONITORING WITH INFRARED OPTICAL-PYROMETER FOR MOLECULAR-BEAM EPITAXY OF III-V SEMICONDUCTORS

被引：32

作者：

MIZUTANI, T

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584428

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1671 / 1677

页数：7

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共 15 条

[1] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM
ARTHUR, JR
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) : 2257 - &
[2] MAGNESIUM-DOPED GAAS AND ALXGA1-XAS BY MOLECULAR-BEAM EPITAXY
CHO, AY
PANISH, MB
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 5118 - 5123
[3] FOXON CT, 1973, J PHYS CHEM SOLIDS, V34, P1963
[4] HANSEN M, 1985, CONSTITUTION BINARY, P133
[5] INFRARED TRANSMISSION SPECTROSCOPY OF GAAS DURING MOLECULAR-BEAM EPITAXY
HELLMAN, ES
HARRIS, JS
[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 38 - 42
[6] DETERMINATION OF THE TOTAL EMITTANCE OF NORMAL-TYPE GAAS WITH APPLICATION TO CZOCHRALSKI GROWTH
JORDAN, AS
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) : 2218 - 2227
[7] MADELUNG O, 1982, LANDOLTBORNSTEIN ZAH
[8] AN INDIUM-FREE MOUNT FOR GAAS SUBSTRATE HEATING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH
MARS, DE
MILLER, JN
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 571 - 573
[9] HIGH MOBILITY GAINAS THIN-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
MIZUTANI, T
HIROSE, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02): : L119 - L121
[10] ROLL A, 1957, Z METALLKD, V48, P272