REFLECTIVITY AND (DR/DE)/R OF GAP BETWEEN 2.5 AND 6.0 EV

被引:44
作者
STOKOWSKI, SE
SELL, DD
机构
来源
PHYSICAL REVIEW B-SOLID STATE | 1972年 / 5卷 / 04期
关键词
D O I
10.1103/PhysRevB.5.1636
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:1636 / +
页数:1
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共 19 条
[1]   REFLECTIVITY AND BAND STRUCTURE OF GAAS GAP AND GA(AS P) ALLOYS [J].
BERGSTRESSER, TK ;
COHEN, ML ;
WILLIAMS, EW .
PHYSICAL REVIEW LETTERS, 1965, 15 (16) :662-+
[2]  
BRAUNSTEIN R, 1970, CONF700801 US AT EN, P439
[3]   ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J].
CARDONA, M ;
SHAKLEE, KL ;
POLLAK, FH .
PHYSICAL REVIEW, 1967, 154 (03) :696-+
[4]   SPECTRAL ANALYSIS OF PHOTOEMISSIVE YIELDS IN SI GE GAAS GASB INAS AND INSB [J].
COHEN, ML ;
PHILLIPS, JC .
PHYSICAL REVIEW, 1965, 139 (3A) :A912-&
[5]   INTRINSIC OPTICAL ABSORPTION OF GALLIUM PHOSPHIDE BETWEEN 2.33 AND 3.12 EV [J].
DEAN, PJ ;
KAMINSKY, G ;
ZETTERSTROM, RB .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) :3551-+
[6]   DETAILED STUDY OF GAMMA15 CONDUCTION-BAND MINIMUM IN GERMANIUM BY PHOTOEMISSION AND TRANSVERSE ELECTROREFLECTANCE [J].
DONOVAN, TM ;
FISCHER, JE ;
MATSUZAK.J ;
SPICER, WE .
PHYSICAL REVIEW B, 1971, 3 (12) :4292-&
[7]   INTERBAND TRANSITIONS IN GROUPS 4, 3-5, AND 2-6 SEMICONDUCTORS [J].
EHRENREICH, H ;
PHILLIPS, JC ;
PHILIPP, HR .
PHYSICAL REVIEW LETTERS, 1962, 8 (02) :59-&
[8]  
FOLBERTH OG, 1954, Z NATURFORSCH A, V9, P1050
[9]   THEORETICAL AND EXPERIMENTAL EFFECTS OF SPATIAL DISPERSION ON OPTICAL PROPERTIES OF CRYSTALS [J].
HOPFIELD, JJ ;
THOMAS, DG .
PHYSICAL REVIEW, 1963, 132 (02) :563-&
[10]   THERMOREFLECTANCE IN SEMICONDUCTORS [J].
MATATAGUI, E ;
THOMPSON, AG ;
CARDONA, M .
PHYSICAL REVIEW, 1968, 176 (03) :950-+