REFLECTIVITY AND (DR/DE)/R OF GAP BETWEEN 2.5 AND 6.0 EV

被引：44

作者：

STOKOWSKI, SE

SELL, DD

机构：

来源：

PHYSICAL REVIEW B-SOLID STATE | 1972年 / 5卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.5.1636

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1636 / +

页数：1

共 19 条

[11] ELECTROREFLECTANCE STUDY OF GALLIUM ANTIMONIDE IN 3.0-4.2EV REGION [J].

PARSONS, BJ ;

PILLER, H .

SOLID STATE COMMUNICATIONS, 1971, 9 (11) :767-&

[12]

POLLAK FH, 1966, J PHYS SOC JPN, VS 21, P20

[13] NEW ANALYSIS OF DIRECT EXCITON TRANSITIONS - APPLICATION TO GAP [J].

SELL, DD ;

LAWAETZ, P .

PHYSICAL REVIEW LETTERS, 1971, 26 (06) :311-&

[14] A SENSITIVE SPECTROPHOTOMETER FOR OPTICAL REFLECTANCE AND TRANSMITTANCE MEASUREMENTS [J].

SELL, DD .

APPLIED OPTICS, 1970, 9 (08) :1926-&

[15]

SELL DD, 1972, PHYS REV B, V5, P419

[16] ELECTROREFLECTANCE IN GAAS-GAP ALLOYS [J].

THOMPSON, AG ;

CARDONA, M ;

SHAKLEE, KL ;

WOOLLEY, JC .

PHYSICAL REVIEW, 1966, 146 (02) :601-&

[17] CALCULATION OF REFLECTIVITY, MODULATED REFLECTIVITY, AND BAND STRUCTURE OF GAAS, GAP, ZNSE, AND ZNS [J].

WALTER, JP ;

COHEN, ML .

PHYSICAL REVIEW, 1969, 183 (03) :763-&

[18] CALCULATED SPIN-ORBIT SPLITTINGS OF SOME GROUP-IV, III-V, AND II-VI SEMICONDUCTORS [J].

WEPFER, GG ;

COLLINS, TC ;

EUWEMA, RN .

PHYSICAL REVIEW B, 1971, 4 (04) :1296-&

[19] REFLECTIVITY OF GAAS1-XPX ALLOYS [J].

WOOLLEY, JC ;

THOMPSON, AG ;

RUBENSTEIN, M .

PHYSICAL REVIEW LETTERS, 1965, 15 (16) :670-+

← 1 2 →