INFLUENCE OF GROWTH-CONDITIONS ON THE PHOTOLUMINESCENCE OF PSEUDOMORPHIC MBE GROWN SI1-XGEX QUANTUM-WELLS

被引：8

作者：

BRUNNER, J

MENCZIGAR, U

GAIL, M

FRIESS, E

ABSTREITER, G

机构：

[1] Walter Schottky Institut, Am Coulombwall

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90657-I

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The influence of growth conditions on the photoluminescence of SiGe quantum wells is presented. Growth temperatures above 600-degrees-C are found to be a prerequisite for a good layer quality. The variation of growth rates between 0.25 and 1 angstrom/s, however, has no significant effect on the spectra. With optimized growth conditions, strong excitonic dominated quantum well luminescence with line widths below 5 meV has been achieved.

引用

页码：443 / 446

页数：4

共 14 条

[1] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
BEAN, JC
FELDMAN, LC
FIORY, AT
NAKAHARA, S
ROBINSON, IK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440
[2] BRUNNER J, 1992, IN PRESS THIN SOLID
[3] EXCITONIC PHOTOLUMINESCENCE FROM SI-CAPPED STRAINED SI1-XGEX LAYERS
DUTARTRE, D
BREMOND, G
SOUIFI, A
BENYATTOU, T
[J]. PHYSICAL REVIEW B, 1991, 44 (20): : 11525 - 11527
[4] THEORY OF DIRECT OPTICAL-TRANSITIONS IN AN OPTICAL INDIRECT SEMICONDUCTOR WITH A SUPERLATTICE STRUCTURE
GNUTZMAN.U
CLAUSECK.K
[J]. APPLIED PHYSICS, 1974, 3 (01): : 9 - 14
[5] ONE-DIMENSIONAL SIGE SUPERLATTICE GROWN BY UHV EPITAXY
KASPER, E
HERZOG, HJ
KIBBEL, H
[J]. APPLIED PHYSICS, 1975, 8 (03): : 199 - 205
[6] MENCZIGAR U, 1992, IN PRESS THIN SOLID
[7] INTENSE PHOTOLUMINESCENCE BETWEEN 1.3-MU AND 1.8-MU-M FROM STRAINED SI1-XGEX ALLOYS
NOEL, JP
ROWELL, NL
HOUGHTON, DC
PEROVIC, DD
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1037 - 1039
[8] ELECTROLUMINESCENCE FROM A PSEUDOMORPHIC SI0.8GE0.2 ALLOY
ROBBINS, DJ
CALCOTT, P
LEONG, WY
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (11) : 1350 - 1352
[9] ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE FROM SI1-XGEX ALLOYS
ROWELL, NL
NOEL, JP
HOUGHTON, DC
BUCHANAN, M
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (09) : 957 - 958
[10] DIRECT OBSERVATION OF BAND-EDGE LUMINESCENCE AND ALLOY LUMINESCENCE FROM ULTRAMETASTABLE SILICON-GERMANIUM ALLOY LAYERS
SPITZER, J
THONKE, K
SAUER, R
KIBBEL, H
HERZOG, HJ
KASPER, E
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (14) : 1729 - 1731

← 1 2 →