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BROAD-BAND EMISSION FROM INGAAS-GAAS-ALGAAS LED WITH INTEGRATED ABSORBER BY SELECTIVE-AREA MOCVD

被引：6
作者：
OSOWSKI, ML
LAMMERT, RM
FORBES, DV
ACKLEY, DE
COLEMAN, JJ
机构：
[1] Microelectronics Laboratory, University of Illinois, Urbana, IL 61801
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 17期
关键词：
ALUMINUM GALLIUM ARSENIDE; GALLIUM ARSENIDE; GALLIUM INDIUM ARSENIDE; LIGHT EMITTING DIODES;
D O I：
10.1049/el:19950982
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Three-step selective-area metal organic chemical vapour deposition is used to fabricate a strained layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LED with an integrated absorber. A tapered oxide width mask pattern is used for the active region regrowth to produce an edge emitting device with a continuous variation in the quantum well thickness and composition along its length. A maximum spectral width of 165nm is obtained.
引用
收藏
页码：1498 / 1499
页数：2
相关论文
共 6 条
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