BROAD-BAND EMISSION FROM A MULTIPLE ASYMMETRIC QUANTUM-WELL LIGHT-EMITTING DIODE

被引：7

作者：

HAGER, H

HONG, CS

MANTZ, J

CHAN, E

BOOHER, D

FIGUEROA, L

机构：

[1] High Technology Center, Boeing Aerospace and Electronics

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 05期

关键词：

D O I：

10.1109/68.93870

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have demonstrated broad-band light-emitting diode (LED) emission, with full-width-at-half-maximum (FWHM) values > 100 nm, based on concurrent multiple-state transitions in a single active layer containing two asymmetric quantum wells in the GaAs/AlGaAs material system. This spectral width is much broader (by a factor of 2.5) than that for commercial edge-emitting LED's in the GaAs/AlGaAs system. The new LED device is well suited for broad-band source applications in wavelength-multiplexing-based, fiber-optic sensor network systems.

引用

页码：436 / 438

页数：3

共 11 条

[1] THEORY OF GAIN, MODULATION RESPONSE, AND SPECTRAL LINEWIDTH IN ALGAAS QUANTUM WELL LASERS [J].