INSTRUMENTAL NEUTRON-ACTIVATION ANALYSIS OF SEMICONDUCTOR GRADE SILICON

被引：22

作者：

FUJINAGA, K ^{[1
]}

KUDO, K ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP,IBARAKI ELECT COMMUN LABS,TOKAI,IBARAKI 31911,JAPAN

来源：

JOURNAL OF RADIOANALYTICAL CHEMISTRY | 1979年 / 52卷 / 02期

关键词：

D O I：

10.1007/BF02521292

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The single comparator method in neutron activation analysis has been applied to the investigation of the purity of silicon single-crystals of different origins. The following impurities were determined: Au, Sb, Co, Cu and Na. Studies were also carried out on the surface contamination of silicon samples introduced through steps of sample preparation and irradiation. Up to nineteen elements on the surface of samples were analysed and found to be easily reduced to low levels or detection limits by washing and etching. © 1979 Akadémiai Kiadó.

引用

页码：411 / 419

页数：9

共 5 条

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[2] FUJINAGA K, ANAL CHIM ACTA
[3] REACTOR NEUTRON ACTIVATION ANALYSIS BY SINGLE COMPARATOR METHOD
GIRARDI, F
GUZZI, G
PAULY, J
[J]. ANALYTICAL CHEMISTRY, 1965, 37 (09) : 1085 - &
[4] NEUTRON-ACTIVATION ANALYSIS OF SEMICONDUCTOR SILICON
NIESE, S
[J]. JOURNAL OF RADIOANALYTICAL CHEMISTRY, 1977, 38 (1-2): : 37 - 41
[5] ACTIVATION ANALYTICAL METHODS FOR GRADING OF SEMICONDUCTOR CRYSTALS
SZABO, E
[J]. JOURNAL OF RADIOANALYTICAL CHEMISTRY, 1974, 19 (01): : 23 - 32

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