APPLICATION OF BIPOLAR-TRANSISTOR STRUCTURES TO OPTICAL WAVE-GUIDE MODULATORS AND SWITCHES

被引：8

作者：

OKADA, Y ^{[1
]}

TADA, K ^{[1
]}

机构：

[1] UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 01期

关键词：

D O I：

10.1063/1.347659

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Basic experimental results obtained with a GaAs/AlGaAs double-heterojunction bipolar transistor (DHBT) waveguide structure carrier-injected optical intensity modulator/switch are fully described. Typical common-emitter dc current gain obtained with a 0.25-mu-m-thick base/waveguide was approximately 40, and the switching times have been determined as 1.5 ns. Optical on/off modulation ratios of up to 2.1:1 have been demonstrated at an input base current of as small as 3 mA for a device with emitter/waveguide width of 7-mu-m and length of 190-mu-m. Design and analysis of the optical switching characteristics expected for a reflection-type-X-crossing optical switch of DHBT waveguide structure are also presented on the basis of these experimental results.

引用

页码：73 / 78

页数：6

共 21 条

[1] JUNCTION FIELD-EFFECT TRANSISTOR SINGLE QUANTUM WELL OPTICAL WAVE-GUIDE MODULATOR EMPLOYING THE TWO-DIMENSIONAL MOSS-BURSTEIN EFFECT [J].