APPLICATION OF BIPOLAR-TRANSISTOR STRUCTURES TO OPTICAL WAVE-GUIDE MODULATORS AND SWITCHES

被引:8
作者
OKADA, Y [1 ]
TADA, K [1 ]
机构
[1] UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN
关键词
D O I
10.1063/1.347659
中图分类号
O59 [应用物理学];
学科分类号
摘要
Basic experimental results obtained with a GaAs/AlGaAs double-heterojunction bipolar transistor (DHBT) waveguide structure carrier-injected optical intensity modulator/switch are fully described. Typical common-emitter dc current gain obtained with a 0.25-mu-m-thick base/waveguide was approximately 40, and the switching times have been determined as 1.5 ns. Optical on/off modulation ratios of up to 2.1:1 have been demonstrated at an input base current of as small as 3 mA for a device with emitter/waveguide width of 7-mu-m and length of 190-mu-m. Design and analysis of the optical switching characteristics expected for a reflection-type-X-crossing optical switch of DHBT waveguide structure are also presented on the basis of these experimental results.
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页码:73 / 78
页数:6
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