DIFFUSION-COEFFICIENT OF ELECTRONS IN SILICON

被引:132
作者
BRUNETTI, R [1 ]
JACOBONI, C [1 ]
NAVA, F [1 ]
REGGIANI, L [1 ]
BOSMAN, G [1 ]
ZIJLSTRA, RJJ [1 ]
机构
[1] STATE UNIV UTRECHT,EXPTL FYS LAB,UTRECHT,NETHERLANDS
关键词
D O I
10.1063/1.328622
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:6713 / 6722
页数:10
相关论文
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[33]   HOT-ELECTRON DIFFUSION NOISE IN N-SILICON USING A RADIOMETRIC METHOD IN X-BAND REGION [J].
ZIMMERMANN, J ;
BONFILS, S ;
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CONSTANT, E .
APPLIED PHYSICS LETTERS, 1977, 30 (05) :245-247