STRIPE-GEOMETRY LASER WITH INSITU OHMIC CONTACT AND SELF-ALIGNED NATIVE SURFACE OXIDE MASK FOR CURRENT ISOLATION PREPARED BY MOLECULAR-BEAM EPITAXY

被引：3

作者：

TSANG, WT

LOGAN, RA

DITZENBERGER, JA

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 03期

关键词：

D O I：

10.1049/el:19820082

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：123 / 124

页数：2

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