N-SOURCE DRAIN COMPENSATION EFFECTS IN SUBMICROMETER LDD MOS DEVICES

被引：7

作者：

HAMADA, A

IGURA, Y

IZAWA, R

TAKEDA, E

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 09期

关键词：

D O I：

10.1109/EDL.1987.26673

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：398 / 400

页数：3

共 8 条

[1] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J].

DENNARD, RH ;

GAENSSLEN, FH ;

YU, HN ;

RIDEOUT, VL ;

BASSOUS, E ;

LEBLANC, AR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :256-268

[2] STRUCTURE-ENHANCED MOSFET DEGRADATION DUE TO HOT-ELECTRON INJECTION [J].

HSU, FC ;

GRINOLDS, HR .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) :71-74

[3] ACCURACY OF AN EFFECTIVE CHANNEL LENGTH EXTERNAL RESISTANCE EXTRACTION ALGORITHM FOR MOSFETS [J].

LAUX, SE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (09) :1245-1251

[4]

Masuda H., 1984, 1984 IEEE International Symposium on Circuits and Systems. Proceedings (Cat. No. 84CH1993-5), P1163

[5]

NG KK, 1986, P VLSI S, P27

[6] DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR [J].

OGURA, S ;

TSANG, PJ ;

WALKER, WW ;

CRITCHLOW, DL ;

SHEPARD, JF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1359-1367

[7]

OGURA S, 1985, IEDM TECH DIG, P718

[8]

SZE SM, 1981, PHYSICS SEMICONDUCTO

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