NH4OH-BASED ETCHANTS FOR SILICON MICROMACHINING

被引：56

作者：

SCHNAKENBERG, U

BENECKE, W

LOCHEL, B

机构：

[1] Fraunhofer-Institut für Mikrostrukturtechnik, D-1000 Berlin 33

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1990年 / 23卷 / 1-3期

关键词：

D O I：

10.1016/0924-4247(90)87084-V

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Wet chemical etchants based on ammonium hydroxide-water (AHW) solutions for micromachining monocrystalline silicon are described. The etchants can be applied under clean-room conditions within standard IC fabrication lines. The nature of AHW solutions is discussed with respect to anisotropy and selectivity. At 75 °C and 9 wt.% AHW, a maximum etch rate for (100) silicon of approximately 30μm/h has been determined. (111):(100) etch rate ratios show values around 4%. AHW etchants exhibit an excellent selectivity to SiO2, Si3N4 and highly boron-doped silicon. Aluminium will not be attacked by silicon-doped AHW etchants. Therefore, standard IC metallization techniques can be used for device fabrication. The application of AHW solutions to the fabrication of basic micromechanical structures is demonstrated. © 1990.

引用

页码：1031 / 1035

页数：5

共 19 条

[1] FABRICATION OF NOVEL 3-DIMENSIONAL MICROSTRUCTURES BY ANISOTROPIC ETCHING OF (100) AND (110) SILICON [J].