DEEP IMPURITY LEVELS IN INP LEC CRYSTALS

被引：64

作者：

YAMAZOE, Y ^{[1
]}

SASAI, Y ^{[1
]}

NISHINO, T ^{[1
]}

HAMAKAWA, Y ^{[1
]}

机构：

[1] MATSUSHITA ELECT IND CO LTD,KADOMA,OSAKA 571,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 02期

关键词：

D O I：

10.1143/JJAP.20.347

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：347 / 354

页数：8

共 23 条

[1]

BARTHRUFF D, 1979, J ELECTRON MATER, V8, P485, DOI 10.1007/BF02652400

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[4] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J].

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LANG, DV .

PHYSICAL REVIEW B, 1977, 15 (02) :989-1016

[5] DEEP LEVEL SPECTROSCOPY, LOW-TEMPERATURE DEFECT MOTION AND NONRADIATIVE RECOMBINATION IN GAAS AND GAP [J].

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[6] LIQUID-PHASE EPITAXY OF INP [J].

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STATH, N ;

BENZ, KW .

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[7] PHOTO-LUMINESCENCE OF UNDOPED (100) INP HOMOEPITAXIAL FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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APPLIED PHYSICS LETTERS, 1979, 35 (07) :481-484

[8] INCREASING EFFECTIVE BARRIER HEIGHT OF SCHOTTKY CONTACTS TO N-INXGA1-XAS [J].

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FREY, J .

ELECTRONICS LETTERS, 1978, 14 (23) :737-738

[9]

Mullin J. B., 1972, Journal of Crystal Growth, V13-14, P640, DOI 10.1016/0022-0248(72)90534-9

[10] OBSERVATION OF DEEP IMPURITY LEVELS IN IN0.85GA0.15AS0.39P0.61 [J].

SASAI, Y ;

YAMAZOE, Y ;

OKUYAMA, M ;

NISHINO, T ;

HAMAKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (07) :1415-1416

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