ANISOTROPIC STRUCTURAL, ELECTRONIC, AND OPTICAL-PROPERTIES OF INGAAS GROWN BY MOLECULAR-BEAM EPITAXY ON MISORIENTED SUBSTRATES

被引：18

作者：

GOLDMAN, RS ^{[1
]}

WIEDER, HH ^{[1
]}

KAVANAGH, KL ^{[1
]}

RAMMOHAN, K ^{[1
]}

RICH, DH ^{[1
]}

机构：

[1] UNIV SO CALIF, DEPT MAT SCI & ENGN, PHOTON MAT & DEVICES LAB, LOS ANGELES, CA 90089 USA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 11期

关键词：

D O I：

10.1063/1.112071

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the structural, electronic, and optical properties of partially strain-relaxed InxGa1-xAs layers, grown by molecular beam epitaxy on both misoriented and nominally flat (001) GaAs substrates. We find large anisotropies in bulk strain relaxation, interfacial misfit dislocation density, dark-line defect density, and electron mobility, as well as a polarization anisotropy in cathodoluminescence for epilayers grown on misoriented substrates, in comparison with those grown on flat substrates.

引用

页码：1424 / 1426

页数：3

共 31 条

[1] PIEZOELECTRIC EFFECTS IN GAAS-FETS AND THEIR ROLE IN ORIENTATION-DEPENDENT DEVICE CHARACTERISTICS [J].

ASBECK, PM ;

LEE, CP ;

CHANG, MCF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) :1377-1380

[2] ORIENTATION DEPENDENCE OF MISMATCHED INXAL1-XAS/IN0.53GA0.47AS HFETS [J].

BAHL, SR ;

AZZAM, WJ ;

DELALAMO, JA .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :479-483

[3] ORIGIN OF OPTICAL ANISOTROPY IN STRAINED INXGA1-XAS/INP AND INYAL1-YAS/INP HETEROSTRUCTURES [J].

BENNETT, BR ;

DELALAMO, JA ;

SINN, MT ;

PEIRO, F ;

CORNET, A ;

ASPNES, DE .

JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (04) :423-429

[4] OPTICAL ANISOTROPY IN MISMATCHED INGAAS/INP HETEROSTRUCTURES [J].

BENNETT, BR ;

DELALAMO, JA .

APPLIED PHYSICS LETTERS, 1991, 58 (25) :2978-2980

[5] SURFACE AND INTERFACE DEPLETION CORRECTIONS TO FREE CARRIER-DENSITY DETERMINATIONS BY HALL MEASUREMENTS [J].

CHANDRA, A ;

WOOD, CEC ;

WOODARD, DW ;

EASTMAN, LF .

SOLID-STATE ELECTRONICS, 1979, 22 (07) :645-650

[6]

CHANG JCP, 1992, MATER RES SOC SYMP P, V263, P457, DOI 10.1557/PROC-263-457

[7]

CHEN JH, 1992, MATER RES SOC SYMP P, V263, P377, DOI 10.1557/PROC-263-377

[8] PLASTIC BENDING OF INSB [J].

DUGA, JJ .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (01) :169-&

[9] CATHODOLUMINESCENCE AND ELECTRICAL ANISOTROPY FROM ALPHA-DISLOCATIONS AND BETA-DISLOCATIONS IN PLASTICALLY DEFORMED GALLIUM-ARSENIDE [J].

ESQUIVEL, AL ;

SEN, S ;

LIN, WN .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2588-2603

[10] STRUCTURE AND RECOMBINATION IN INGAAS/GAAS HETEROSTRUCTURES [J].

FITZGERALD, EA ;

AST, DG ;

KIRCHNER, PD ;

PETTIT, GD ;

WOODALL, JM .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) :693-703

← 1 2 3 4 →