GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS BY ION-IMPLANTATION

被引：27

作者：

WELCH, BM ^{[1
]}

EISEN, FH ^{[1
]}

HIGGINS, JA ^{[1
]}

机构：

[1] ROCKWELL INT,SCI CTR,THOUSAND OAKS,CA 91360

来源：

关键词：

D O I：

10.1063/1.1663838

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3685 / 3687

页数：3

共 13 条

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[2] EISEN FH, 1973, 3 P INT ION IMPL C
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[4] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS
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WELCH, B
PASHLEY, RD
[J]. APPLIED PHYSICS LETTERS, 1972, 21 (12) : 601 - &
[5] Hunsperger R. G., 1970, Radiation Effects, V6, P263, DOI 10.1080/00337577008236305
[6] GAAS FIELD-EFFECT TRANSISTORS WITH ION-IMPLANTED CHANNELS
HUNSPERGER, RG
HIRSCH, N
[J]. ELECTRONICS LETTERS, 1973, 9 (25) : 577 - 578
[7] PASHLEY RM, UNPUBLISHED
[8] THEORY OF AN EXPERIMENT FOR MEASURING THE MOBILITY AND DENSITY OF CARRIERS IN THE SPACE-CHARGE REGION OF A SEMICONDUCTOR SURFACE
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[J]. PHYSICAL REVIEW, 1958, 110 (06): : 1254 - 1262
[9] Sansbury J. D., 1970, Radiation Effects, V6, P269, DOI 10.1080/00337577008236306
[10] STERZER F, 1971, ELECTRON LETT, V7, P21