TWO-DIMENSIONAL MODELING OF LOCALLY DAMAGED SHORT-CHANNEL MOSFETS OPERATING IN THE LINEAR REGION

被引：65

作者：

HADDARA, H

CRISTOLOVEANU, S

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 02期

关键词：

D O I：

10.1109/T-ED.1987.22933

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：378 / 385

页数：8

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[11] DETERMINATION OF SPATIAL SURFACE-STATE DENSITY DISTRIBUTION IN MOS AND SIMOS TRANSISTORS AFTER CHANNEL HOT-ELECTRON INJECTION
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