SELF-LIMITING ADVANCING GATES FOR GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：4

作者：

FERNANDES, MG ^{[1
]}

HAN, CC ^{[1
]}

XIA, W ^{[1
]}

LAU, SS ^{[1
]}

KWOK, SP ^{[1
]}

机构：

[1] FORD MICROELECTR INC,COLORADO SPRINGS,CO 80908

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584154

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1768 / 1772

页数：5

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