EVALUATION OF CARBON AND OXYGEN-CONTENT OF SILICON-WAFERS USING INFRARED-ABSORPTION

被引：12

作者：

MEAD, DG

LOWRY, SR

机构：

来源：

APPLIED SPECTROSCOPY | 1980年 / 34卷 / 02期

关键词：

D O I：

10.1366/0003702804730574

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：167 / 171

页数：5

共 15 条

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[9] SIMULTANEOUS DETERMINATION OF TOTAL CONTENT OF BORON AND PHOSPHORUS IN HIGH-RESISTIVITY SILICON BY IR SPECTROSCOPY AT LOW-TEMPERATURES [J].

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[10]

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