HETEROGENEOUS KINETICS AND MASS-TRANSPORT IN CHEMICAL VAPOR-DEPOSITION PROCESSES .2. APPLICATION TO SILICON EPITAXY

被引：7

作者：

HITCHMAN, ML ^{[1
]}

CURTIS, BJ ^{[1
]}

机构：

[1] LABS RCA LTD,CH-8048 ZURICH,SWITZERLAND

来源：

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 1981年 / 4卷 / 03期

关键词：

D O I：

10.1016/0146-3535(81)90006-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：283 / 296

页数：14

共 17 条

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ALLEN, FG
[J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1510 - 1511
[2] ASHEN DJ, 1968, J APPL CHEM, V18, P348
[3] EQUILIBRIUM AND KINETICS IN CHEMICAL VAPOR-DEPOSITION OF SILICON
BLOEM, J
[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 256 - 263
[4] HIGH CHEMICAL VAPOR-DEPOSITION RATES OF EPITAXIAL SILICON LAYERS
BLOEM, J
[J]. JOURNAL OF CRYSTAL GROWTH, 1973, 18 (01) : 70 - 76
[5] CHERNOV AA, 1976, DOKL AKAD NAUK SSSR+, V228, P1083
[6] CHERNOV AA, 1978, J JAPAN ASS CRYSTAL, V5, P227
[7] Glasstone S, 1941, THEORY RATE PROCESSE
[8] HARBEKE G, UNPUBLISHED
[9] HITCHMAN MA, UNPUBLISHED
[10] HITCHMAN ML, 1981, PROGR CRYSTAL GROWTH