COMPARISON OF PROPERTIES OF DIELECTRIC FILMS DEPOSITED BY VARIOUS METHODS

[51] KENNEDY TM, 1974, ELECTRON PACK PROD, V14, P136

[52] KERN W, 1976, RCA REV, V37, P78

[53] KERN W, 1976, RCA REV, V37, P55

[54] KERN W, 1976, RCA REV, V37, P3

[55] KERN W, 1971, RCA REV, V32, P429

[56] CHEMICAL VAPOR DEPOSITION OF SILICATE GLASSES FOR USE WITH SILICON DEVICES .2. FILM PROPERTIES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) : 568 - &

[57] KERN W, 1969, J ELECTROCHEM SOC, V116, pC251

[58] STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5 [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 376 - &

[59] A METHOD FOR THE DEPOSITION OF SIO AT LOW TEMPERATURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (11) : 1070 - 1071

[60] ON MECHANISM OF DEPOSITION OF SILICA BY PYROLYTIC DECOMPOSITION OF SILANES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (05) : 503 - &

[51] KENNEDY TM, 1974, ELECTRON PACK PROD, V14, P136

[52] KERN W, 1976, RCA REV, V37, P78

[53] KERN W, 1976, RCA REV, V37, P55

[54] KERN W, 1976, RCA REV, V37, P3

[55] KERN W, 1971, RCA REV, V32, P429

[56] CHEMICAL VAPOR DEPOSITION OF SILICATE GLASSES FOR USE WITH SILICON DEVICES .2. FILM PROPERTIES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) : 568 - &

[57] KERN W, 1969, J ELECTROCHEM SOC, V116, pC251

[58] STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5 [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 376 - &

[59] A METHOD FOR THE DEPOSITION OF SIO AT LOW TEMPERATURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (11) : 1070 - 1071

[60] ON MECHANISM OF DEPOSITION OF SILICA BY PYROLYTIC DECOMPOSITION OF SILANES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (05) : 503 - &