ACTIVATION OF ION-IMPLANTED DOPANTS IN ALPHA-SIC

被引：47

作者：

AHMED, S

BARBERO, CJ

SIGMON, TW

机构：

[1] Department of Electrical Engineering and Applied Physics, Oregon Graduate Institute of Science and Technology, Portland

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 06期

关键词：

D O I：

10.1063/1.114108

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, activation of implanted dopants in 6Hα-SiC using a pulsed excimer laser is reported. Commercially available substrates are implanted with nitrogen or aluminum. A 308 nm pulsed excimer laser is then used to anneal the samples which are held at room temperature. Point contact current-voltage (PCIV) measurements are used to extract the carrier concentration of the annealed layers. Initial results suggest complete activation of the implanted dopants. Pulsed laser annealing of ion implanted SiC appears to be an attractive option as compared to furnace annealing at high temperatures.© 1995 American Institute of Physics.

引用

页码：712 / 714

页数：3

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