Nucleation and growth study of copper thin films on different substrates and wetting layers by metal-organic chemical vapour deposition

被引：3

作者：

Dutta, A

Goswami, J

Shivashankar, SA

机构：

[1] Materials Research Centre, Indian Institute of Science, Bangalore

来源：

BULLETIN OF MATERIALS SCIENCE | 1995年 / 18卷 / 07期

关键词：

chemical vapour deposition; copper thin film; surface morphology;

D O I：

10.1007/BF02745282

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Chemical vapour deposition of copper thin films on different diffusion barrier/adhesion promoter layers have been studied. Copper thin films were grown in low pressure CVD reactor, using Cu(dpm)(2) as precursor and argon as carrier gas. Growth rates, film adhesion to the substrate, and surface morphology were studied in detail.

引用

页码：901 / 910

页数：10

共 9 条

[1] THERMAL ANNEALING OF BURIED AL BARRIER LAYERS TO PASSIVATE THE SURFACE OF COPPER-FILMS [J].