THERMAL ANNEALING OF BURIED AL BARRIER LAYERS TO PASSIVATE THE SURFACE OF COPPER-FILMS

被引：40

作者：

DING, PJ

WANG, W

LANFORD, WA

HYMES, S

MURARKA, SP

机构：

[1] RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12180 USA

[2] SUNY ALBANY, DEPT PHYS, ALBANY, NY 12222 USA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 14期

关键词：

D O I：

10.1063/1.112866

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Annealed metallic bilayers consisting of Cu/Al/SiO2 are studied from the perspective of providing both surface passivation and diffusion barrier/adhesion promoter function for advanced copper based metallization. Upon annealing this bilayer film at 400-degrees-C or higher, enough Al dissolves into the Cu to provide substantial oxidation resistance at the copper surface. The resistivity of these annealed films is approximately 4.5 muOMEGA cm. Compared to films of pure copper, these bilayer films are much more adherent to SiO2 and much more stable (both morphology and diffusion) on SiO2. (C) 1994 American Institute of Physics.

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页码：1778 / 1780

页数：3

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