RESPONSIVITY AND NOISE CHARACTERIZATION OF GE AVALANCHE PHOTO-DIODE THROUGHOUT WAVELENGTH RANGE 1.1-1.7 MU-M

Mixed carrier injection in a commercial n+-p germanium a.p.d. causes the excess multiplication noise to be wavelength-dependent, with averaged k-values of around unity. The quantum efficiency is 70% between 1.1 and 1.5 µm, and the unmultiplied bulk leakage current density is estimated to be 3.5 Õ 10−4 A cm−2. © 1979, The Institution of Electrical Engineers. All rights reserved.