METAL-INSULATOR-TRANSITION IN UNCOMPENSATED SIP IN THE PRESENCE OF A MAGNETIC-FIELD

被引:13
作者
HORNUNG, M
RUZZU, A
SCHLAGER, HG
STUPP, H
VONLOHNEYSEN, H
机构
[1] Physikalisches Institut, Universität Karlsruhe, Karlsruhe, 76128
[2] Institut für Quantenelektronik, Eidgenössische Technische Hochschule, Zürich
[3] Institut für Physik, Universität Basel, Basel
来源
EUROPHYSICS LETTERS | 1994年 / 28卷 / 01期
关键词
D O I
10.1209/0295-5075/28/1/008
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report on detailed measurements of the electrical conductivity sigma(T) in uncompensated Si:P in a magnetic field B of 6T between 30 mK and 1K. The approximate relation sigma(T) = sigma(0) + m(B) square-root T allows a reliable extrapolation of sigma(0). The critical behaviour sigma(0) approximately (N - N(c))mu' close to the critical P concentration N(c) yields a critical exponent mu' almost-equal-to 1.3, with a tendency to smaller values at a crossover concentration which is close to the concentration where m(B) changes strongly. The implications for the previously proposed solution to the exponent puzzle for B = 0 are discussed.
引用
收藏
页码:43 / 47
页数:5
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