EXCESS AND HUMP CURRENT IN ESAKI DIODES

[1] AUKERMAN LW, 1960, TESCRDSCS

[2] POSSIBLE MECHANISM FOR RADIATIONLESS RECOMBINATION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1957, 105 (05): : 1469 - 1475

[3] BLAKEMORE JS, 1952, ELECTRON COMMUN, V29, P131

[4] EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS [J]. PHYSICAL REVIEW, 1961, 121 (03): : 684 - &

[5] CLAASSEN RS, 1960, BULL AM PHYS SOC, V5, P406

[6] A NEW DEVICE USING THE TUNNELING PROCESS IN NARROW P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1960, 1 (01) : 13 - &

[7] ESAKI L, 1960, SOLID STATE PHYS, V1, P514

[8] ESAKI L, 1958, PHYS REV, V109, P602

[9] EFFECT OF MINORITY IMPURITIES ON IMPURITY CONDUCTION IN P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1959, 113 (04): : 999 - 1001

[10] RESISTIVITY AND HALL COEFFICIENT OF ANTIMONY-DOPED GERMANIUM AT LOW TEMPERATURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (01) : 69 - 80

[1] AUKERMAN LW, 1960, TESCRDSCS

[2] POSSIBLE MECHANISM FOR RADIATIONLESS RECOMBINATION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1957, 105 (05): : 1469 - 1475

[3] BLAKEMORE JS, 1952, ELECTRON COMMUN, V29, P131

[4] EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS [J]. PHYSICAL REVIEW, 1961, 121 (03): : 684 - &

[5] CLAASSEN RS, 1960, BULL AM PHYS SOC, V5, P406

[6] A NEW DEVICE USING THE TUNNELING PROCESS IN NARROW P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1960, 1 (01) : 13 - &

[7] ESAKI L, 1960, SOLID STATE PHYS, V1, P514

[8] ESAKI L, 1958, PHYS REV, V109, P602

[9] EFFECT OF MINORITY IMPURITIES ON IMPURITY CONDUCTION IN P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1959, 113 (04): : 999 - 1001

[10] RESISTIVITY AND HALL COEFFICIENT OF ANTIMONY-DOPED GERMANIUM AT LOW TEMPERATURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (01) : 69 - 80