LARGE BINDING DUE TO DISPERSIVE SCREENING AND BLOCH FUNCTION INTERFERENCE IN MANY-VALLEY SEMICONDUCTORS

被引：40

作者：

RESCA, L ^{[1
]}

RESTA, R ^{[1
]}

机构：

[1] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 29卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0038-1098(79)91055-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We derive here a generalization of the effective mass equation which includes the intervalley mixing for many-valley semiconductors. This equation is numerically solved with a model impurity potential for donors in silicon. The results show an extreme sensitivity to the short-range impurity potential and a shallow-deep instability. The combined effect of dispersive screening and many-valley interference gives a deep ground state. This seem to be in agreement with the experimental situation for hydrogen and muonium impurities, to which the chosen model potential applies. © 1979.

引用

页码：275 / 277

页数：3

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