ONE-DIMENSIONAL TRANSPORT OF ELECTRONS IN SI/SI0.7GE0.3 HETEROSTRUCTURES

被引：14

作者：

HOLZMANN, M

TOBBEN, D

ABSTREITER, G

WENDEL, M

LORENZ, H

KOTTHAUS, JP

SCHAFFLER, F

机构：

[1] UNIV MUNICH, SEKT PHYS, D-80539 MUNICH, GERMANY

[2] DAIMLER BENZ AG, GORSCHUNGSINST ULM, D-89081 ULM, GERMANY

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 07期

关键词：

D O I：

10.1063/1.113437

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetotransport of high-mobility electrons in quasi-one-dimensional quantum wires in Si/Si0.7Ge0.3 heterostructures is studied. Arrays of shallow and deep etched wires with a period of 480 nm are defined by laser holography and patterned by reactive ion etching. Typical features of transport in narrow electron channels, such as oscillations due to the depopulation of quasi-one-dimensional subbands and an anomalous resistance maximum at low magnetic fields are observed. The narrowest channels have an effective width of ≈70 nm and a sublevel spacing of 1 meV.© 1995 American Institute of Physics.

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页码：833 / 835

页数：3

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