FIELD-EFFECT INDUCED ELECTRON CHANNELS IN A SI/SI0.7GE0.3 HETEROSTRUCTURE

被引：9

作者：

HOLZMANN, M ^{[1
]}

TOBBEN, D ^{[1
]}

ABSTREITER, G ^{[1
]}

SCHAFFLER, F ^{[1
]}

机构：

[1] DAIMLER BENZ AG, FORSCHUNGSINST ULM, D-89081 ULM, GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 06期

关键词：

D O I：

10.1063/1.357401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Size effects in field-effect induced wires imposed upon a high-mobility Si/Si0.7Ge0.3 heterostructure were studied by magnetotransport. Spatial separation of the electron channels was accomplished by means of a periodically modulated Schottky gate. The magnetoresistance parallel to the wires shows a well-pronounced peak at magnetic fields <0.3 T at a gate bias less than or equal to 0 V. This maximum results from diffuse boundary scattering and proves the existence of spatially separated electron channels. From its position wire widths varying from 0.14 to 0.28 mu m can be estimated.

引用

页码：3917 / 3919

页数：3

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