LASER CLEANED SILICON SURFACES - ELECTRONIC-STRUCTURE AND SURFACE CRYSTALLOGRAPHY

被引：6

作者：

MCKINLEY, A

WILLIAMS, RH

PARKE, A

SRIVASTAVA, GP

机构：

来源：

VACUUM | 1981年 / 31卷 / 10-1期

关键词：

D O I：

10.1016/0042-207X(81)90062-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：549 / 552

页数：4

共 15 条

[1] OPTICAL-PROPERTIES OF DANGLING-BOND STATES AT CLEAVED SILICON SURFACES [J].

ASSMANN, J ;

MONCH, W .

SURFACE SCIENCE, 1980, 99 (01) :34-44

[2] ENERGY-MINIMIZATION APPROACH TO ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES [J].

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1978, 41 (15) :1062-1065

[3] ANGLE-RESOLVED PHOTOEMISSION AND VALENCE BAND DISPERSIONS ENERGY OF CRYSTAL MOMENTUM FOR GAAS - DIRECT VS INDIRECT MODELS [J].

CHIANG, TC ;

KNAPP, JA ;

EASTMAN, DE ;

AONO, M .

SOLID STATE COMMUNICATIONS, 1979, 31 (12) :917-920

[4]

COHEN ML, 1966, PHYS REV, V141, P786

[5] SIMILARITY BETWEEN THE SI(111)-(7 X 7) AND IMPURITY-STABILIZED SI(111)-(1 X 1) SURFACES [J].

EASTMAN, DE ;

HIMPSEL, FJ ;

VANDERVEEN, JF .

SOLID STATE COMMUNICATIONS, 1980, 35 (04) :345-347

[6] LOW-ENERGY ELECTRON-DIFFRACTION FROM SI(111)-2 X 1 - THEORY AND EXPERIMENT [J].

FEDER, R ;

MONCH, W ;

AUER, PP .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (05) :L179-L184

[7] VALENCE BAND-STRUCTURE OF PBS FROM ANGLE-RESOLVED PHOTOEMISSION [J].

GRANDKE, T ;

LEY, L ;

CARDONA, M .

PHYSICAL REVIEW LETTERS, 1977, 38 (18) :1033-1036

[8] INVESTIGATION OF THIN SILVER FILMS ON CLEAVED SILICON SURFACES [J].

MCKINLEY, A ;

WILLIAMS, RH ;

PARKE, AW .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (12) :2447-2463

[9] ATOMICALLY CLEAN SEMICONDUCTOR SURFACES PREPARED BY LASER IRRADIATION [J].

MCKINLEY, A ;

PARKE, AW ;

HUGHES, GJ ;

FRYAR, J ;

WILLIAMS, RH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1980, 13 (10) :L193-L197

[10]

MCKINLEY A, 1980, J PHYS C, V13

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