THE ROLE OF AN AMORPHOUS SIC-H BUFFER IN THE HIGH-PERFORMANCE MU-C-SIC-H A-SIC-H POLY-SI HETEROJUNCTION SOLAR-CELLS

被引：7

作者：

HIRATA, GA ^{[1
]}

NISHIMOTO, T ^{[1
]}

MATSUMOTO, Y ^{[1
]}

OKAMOTO, H ^{[1
]}

HAMAKAWA, Y ^{[1
]}

FARIAS, MH ^{[1
]}

COTAARAIZA, L ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 10期

关键词：

D O I：

10.1109/55.119189

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-efficiency solar cells have been developed using relatively simple processing at low temperatures up to 300-degrees-C. The cells studied were p + mu-c-SiC:H/p a-SIC:H (buffer)/n poly-Si and n+ mu-c-SiC:H/n a-SiC:H (buffer)/p poly-Si heterojunctions fabricated by the electron cyclotron resonance (ECR) plasma chemical vapor deposition (CVD) method. The thin amorphous buffer layer played an important role in improving the photovoltaic performance. Upon the optimization of the buffer layer thickness, we have achieved a conversion efficiency of eta = 15.4% under AM1 solar simulated radiation of 100 mW/cm2.

引用

页码：562 / 564

页数：3

共 8 条

[1] PROPERTIES OF P+ MICROCRYSTALLINE FILMS OF SIC-H DEPOSITED BY CONVENTIONAL RF-GLOW DISCHARGE [J].