SILICON EPITAXIAL-GROWTH BY ROTATING DISK METHOD

[1] THICKNESS MEASUREMENT OF EPITAXIAL FILMS BY THE INFRARED INTERFERENCE METHOD [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (08) : 709 - 713

[2] ALLEN FG, 1957, JAPAN J APPL PHYS, V28, P1910

[3] BIRD RB, 1960, TRANSPORT PHENOMENA, P316

[4] BIRD RB, 1960, TRANSPORT PHENOMENA, P130

[5] BRADSHAW SE, 1968, INT J ELECTRONICS, V23, P381

[6] KINETICS OF SILICON CRYSTAL GROWTH FROM SICL4 DECOMPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (12) : 1171 - 1175

[7] The flow due to a rotating disc. [J]. PROCEEDINGS OF THE CAMBRIDGE PHILOSOPHICAL SOCIETY, 1934, 30 : 365 - 375

[8] A STAGNANT LAYER MODEL FOR EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) : 925 - +

[9] FUJITA H, 1951, KAGAKU KIKAI, V15, P234

[10] NUMERICAL ANALYSES OF SOLID-LIQUID INTERFACE SHAPES DURING CRYSTAL GROWTH BY CZOCHRALSKI METHOD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (04) : 361 - +

[1] THICKNESS MEASUREMENT OF EPITAXIAL FILMS BY THE INFRARED INTERFERENCE METHOD [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (08) : 709 - 713

[2] ALLEN FG, 1957, JAPAN J APPL PHYS, V28, P1910

[3] BIRD RB, 1960, TRANSPORT PHENOMENA, P316

[4] BIRD RB, 1960, TRANSPORT PHENOMENA, P130

[5] BRADSHAW SE, 1968, INT J ELECTRONICS, V23, P381

[6] KINETICS OF SILICON CRYSTAL GROWTH FROM SICL4 DECOMPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (12) : 1171 - 1175

[7] The flow due to a rotating disc. [J]. PROCEEDINGS OF THE CAMBRIDGE PHILOSOPHICAL SOCIETY, 1934, 30 : 365 - 375

[8] A STAGNANT LAYER MODEL FOR EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) : 925 - +

[9] FUJITA H, 1951, KAGAKU KIKAI, V15, P234

[10] NUMERICAL ANALYSES OF SOLID-LIQUID INTERFACE SHAPES DURING CRYSTAL GROWTH BY CZOCHRALSKI METHOD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (04) : 361 - +