ON THE USE OF DIMERIC ANTIMONY IN MOLECULAR-BEAM EPITAXY

被引:28
作者
ROUILLARD, Y
LAMBERT, B
TOUDIC, Y
BAUDET, M
GAUNEAU, M
机构
[1] France Telecom, CNET, LAB, F-22301 Lannion, Route de Trégastel
关键词
D O I
10.1016/0022-0248(95)00271-5
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We have conducted studies on the use of a cracker cell for antimony generating Sb-2 molecules. For GaSb/GaSb epilayers, compared with the ones produced with a traditional cell generating Sb-4 molecules, the use of the cracker cell has allowed two remarkable improvements: The most impressive one is the optical quality as displayed by photoluminescence at 2 K. We present in particular a spectrum with a BE4 excitonic line of full width at half maximum equal to 1.7 meV, which is, in our knowledge, the best reported value in the field of MBE. The other is the higher crystallographic quality: GaSb epilayers made from Sb-4 surprisingly did not match the GaSb substrate. We showed that this mismatch could be attributed to arsenic coming from a film deposited on the surroundings of the antimony cell during previous arsenide growth. The continuous heating of the cracker tube (at a stand-by temperature of 700 degrees C) caused the sublimation and the total disappearance of the film of arsenic. Epilayers made with the ''clean'' cracker cell match the substrate and have 004 diffraction peaks with a FWHM of 12 '' which is the typical value given by bare substrates.
引用
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页码:30 / 38
页数:9
相关论文
共 13 条
[1]  
BAXTER RD, 1967, J PHYS CHEM SOLIDS, V28, P25
[2]  
CHATILLON C, COMMUNICATION
[3]   HIGH-QUALITY UNDOPED N-TYPE GASB EPILAYERS BY LOW-TEMPERATURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].
CHEN, SM ;
SU, YK .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (04) :2892-2895
[4]   PHOTOLUMINESCENCE OF GASB GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY [J].
CHIDLEY, ETR ;
HAYWOOD, SK ;
HENRIQUES, AB ;
MASON, NJ ;
NICHOLAS, RJ ;
WALKER, PJ .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (01) :45-53
[5]   SELENIUM RESIDUAL DOPING OF (ALGA)SB/GASB EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
GAUNEAU, M ;
CHAPLAIN, R ;
TOUDIC, Y ;
RUPERT, A ;
GRANDPIERRE, G ;
SALVI, M .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (12) :5847-5852
[6]   LUMINESCENCE AND PHOTOCONDUCTIVITY OF UNDOPED P-GASB [J].
JAKOWETZ, W ;
RUHLE, W ;
BREUNINGER, K ;
PILKUHN, M .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 12 (01) :169-+
[7]  
KRAUZE AS, 1972, SOV PHYS SEMICOND+, V5, P1661
[8]   A PHOTOLUMINESCENCE AND HALL-EFFECT STUDY OF GASB GROWN BY MOLECULAR-BEAM EPITAXY [J].
LEE, M ;
NICHOLAS, DJ ;
SINGER, KE ;
HAMILTON, B .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) :2895-2900
[9]   MOLECULAR-BEAM EPITAXY OF GASB [J].
LONGENBACH, KF ;
WANG, WI .
APPLIED PHYSICS LETTERS, 1991, 59 (19) :2427-2429
[10]   BOUND EXCITONS AT DOUBLY IONIZABLE ACCEPTORS IN GASB [J].
NOACK, RA ;
RUHLE, W ;
MORGAN, TN .
PHYSICAL REVIEW B, 1978, 18 (12) :6944-6956