A PHOTOLUMINESCENCE AND HALL-EFFECT STUDY OF GASB GROWN BY MOLECULAR-BEAM EPITAXY

被引：152

作者：

LEE, M

NICHOLAS, DJ

SINGER, KE

HAMILTON, B

机构：

来源：

关键词：

D O I：

10.1063/1.336948

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2895 / 2900

页数：6

共 20 条

[1] ALLEGRE J, 1979, AM I PHYS C SER, V46, P379
[2] AVERKIEV NS, 1982, SOV PHYS SEMICOND+, V16, P813
[3] SCHOTTKY-BARRIER GA1-XALXAS1-YSBY ALLOY AVALANCHE PHOTODETECTORS
CHIN, R
LAW, HD
NAKANO, K
MILANO, RA
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (06) : 550 - 551
[4] THE ORGANO-METALLIC VPE GROWTH OF GASB AND GAAS1-XSBX USING TRIMETHYLANTIMONY
COOPER, CB
SAXENA, RR
LUDOWISE, MJ
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (06) : 1001 - 1010
[5] BAND STRUCTURE AND TRANSPORT PROPERTIES OF SOME 3-5 COMPOUNDS
EHRENREICH, H
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2155 - &
[6] MOLECULAR-BEAM EPITAXY OF ALSB ON GAAS AND GASB ON ALSB FILMS
GOTOH, H
SASAMOTO, K
KURODA, S
KIMATA, M
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 75 (02): : 641 - 645
[7] S-DOPING OF MBE-GASB WITH H2S GAS
GOTOH, H
SASAMOTO, K
KURODA, S
YAMAMOTO, T
TAMAMURA, K
FUKUSHIMA, M
KIMATA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (12) : L893 - L896
[8] LUMINESCENCE AND PHOTOCONDUCTIVITY OF UNDOPED P-GASB
JAKOWETZ, W
RUHLE, W
BREUNINGER, K
PILKUHN, M
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 12 (01): : 169 - +
[9] JAKOWETZ W, 1977, AIP C P, V33, P41
[10] KERR TH, UNPUB