SCHOTTKY-BARRIER GA1-XALXAS1-YSBY ALLOY AVALANCHE PHOTODETECTORS

被引：8

作者：

CHIN, R

LAW, HD

NAKANO, K

MILANO, RA

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 06期

关键词：

D O I：

10.1063/1.91982

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：550 / 551

页数：2

相关论文

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[1] [Anonymous], 1977, SEMICONDUCTORS SEMIM
[2] VERY HIGH QUANTUM EFFICIENCY GASB MESA PHOTODETECTORS BETWEEN 1.3 AND 1.6-MU-M
CAPASSO, F
PANISH, MB
SUMSKI, S
FOY, PW
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (02) : 165 - 167
[3] LIQUID-PHASE EPITAXIAL-GROWTH OF LATTICE-MATCHED INGAASP ON (100)-INP FOR 1.15-1.31-MU-M SPECTRAL REGION
FENG, M
WINDHORN, TH
TASHIMA, MM
STILLMAN, GE
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (11) : 758 - 761
[4] EVIDENCE FOR TUNNELING IN REVERSE-BIASED III-V PHOTODETECTOR DIODES
FORREST, SR
DIDOMENICO, M
SMITH, RG
STOCKER, HJ
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 580 - 582
[5] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M
HSIEH, JJ
ROSSI, JA
DONNELLY, JP
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (12) : 709 - 711
[6] GAINASP-INP AVALANCHE PHOTO-DIODES
HURWITZ, CE
HSIEH, JJ
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 487 - 489
[7] ALGAASSB AVALANCHE PHOTO-DIODES FOR 1.0-1.3-MU-M WAVELENGTH REGION
KAGAWA, T
MOTOSUGI, G
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (12) : 2317 - 2318
[8] ION-IMPLANTED INGAASP AVALANCHE PHOTO-DIODE
LAW, HD
TOMASETTA, LR
NAKANO, K
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (11) : 920 - 922
[9] LAW HD, 1978, APPL PHYS LETT, V33, P640
[10] CRYSTAL SYNTHESIS, ELECTRICAL PROPERTIES, AND SPONTANEOUS AND STIMULATED PHOTOLUMINESCENCE OF IN1-XGAXP-N GROWN FROM SOLUTION
MACKSEY, HM
HOLONYAK, N
DUPUIS, RD
CAMPBELL, JC
ZACK, GW
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1333 - 1341