UNIFORM AND EFFICIENT GAAS/ALGAAS QUANTUM DOTS

被引:19
作者
BESTWICK, TD
DAWSON, MD
KEAN, AH
DUGGAN, G
机构
[1] Sharp Laboratories of Europe, Ltd., Oxford Science Park, Oxford OX4 4GA, Edmund Halley Road
关键词
D O I
10.1063/1.113208
中图分类号
O59 [应用物理学];
学科分类号
摘要
Uniform arrays of approximately 57 nm diam free-standing quantum dots have been produced from GaAs/AlGaAs single quantum well material by electron-beam lithography and low damage electron cyclotron resonance plasma etching. Low-temperature (5 K) photoluminescence and photoluminescence excitation spectroscopy were used to characterize the material before and after processing into quantum dots. Clear free-exciton features of linewidth comparable to that obtained from the unprocessed material have been observed in the excitation spectra of the quantum dots. As expected for this size of dot, no significant shift in the wavelength of the luminescence was observed, however, there is an apparent enhancement of the external luminescence efficiency when the geometric fill factor is taken into account. The results also show that luminescence efficiency measurements seeking to identify and elucidate intrinsic 0D effects (i.e., those due to quantum confinement in the active region) should be performed with photoexcitation directly into the active region energy states.© 1995 American Institute of Physics.
引用
收藏
页码:1382 / 1384
页数:3
相关论文
共 17 条
  • [1] BASTARD G, 1982, PHYS REV B, V12, P7584
  • [2] INTRINSIC MECHANISM FOR THE POOR LUMINESCENCE PROPERTIES OF QUANTUM-BOX SYSTEMS
    BENISTY, H
    SOTOMAYORTORRES, CM
    WEISBUCH, C
    [J]. PHYSICAL REVIEW B, 1991, 44 (19) : 10945 - 10948
  • [3] Burenkov A.F., 1986, TABLES ION IMPLANTAT
  • [4] DETERMINATION OF NONRADIATIVE SURFACE-LAYER THICKNESS IN QUANTUM DOTS ETCHED FROM SINGLE QUANTUM WELL GAAS/ALGAAS
    CLAUSEN, EM
    CRAIGHEAD, HG
    WORLOCK, JM
    HARBISON, JP
    SCHIAVONE, LM
    FLOREZ, L
    VANDERGAAG, B
    [J]. APPLIED PHYSICS LETTERS, 1989, 55 (14) : 1427 - 1429
  • [5] PHOTOLUMINESCENCE AND ELECTROOPTIC PROPERTIES OF SMALL (25-35 NM DIAMETER) QUANTUM BOXES
    DAVIS, L
    KO, KK
    LI, WQ
    SUN, HC
    LAM, Y
    BROCK, T
    PANG, SW
    BHATTACHARYA, PK
    ROOKS, MJ
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (22) : 2766 - 2768
  • [6] POSITIONS OF THE SUB-BAND MINIMA IN GAAS-(ALGA)AS QUANTUM WELL HETEROSTRUCTURES
    DAWSON, P
    DUGGAN, G
    RALPH, HI
    WOODBRIDGE, K
    THOOFT, GW
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (03) : 231 - 235
  • [7] INSITU BURIED GAINAS/INP QUANTUM DOT ARRAYS BY SELECTIVE AREA METALORGANIC VAPOR-PHASE EPITAXY
    GALEUCHET, YD
    ROTHUIZEN, H
    ROENTGEN, P
    [J]. APPLIED PHYSICS LETTERS, 1991, 58 (21) : 2423 - 2425
  • [8] REEVALUATION OF BLUESHIFTS INTRODUCED BY LATERAL CONFINEMENT IN QUANTUM-WELL WIRE STRUCTURES
    GUSTAFSSON, A
    LIU, X
    MAXIMOV, I
    SAMUELSON, L
    SEIFERT, W
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (15) : 1709 - 1711
  • [9] STRAIN-INDUCED LATERAL CONFINEMENT OF EXCITONS IN GAAS-ALGAAS QUANTUM WELL MICROSTRUCTURES
    KASH, K
    WORLOCK, JM
    STURGE, MD
    GRABBE, P
    HARBISON, JP
    SCHERER, A
    LIN, PSD
    [J]. APPLIED PHYSICS LETTERS, 1988, 53 (09) : 782 - 784
  • [10] FABRICATION AND OPTICAL CHARACTERIZATION OF QUANTUM WIRES FROM SEMICONDUCTOR-MATERIALS WITH VARYING IN CONTENT
    MAILE, BE
    FORCHEL, A
    GERMANN, R
    GRUTZMACHER, D
    MEIER, HP
    REITHMAIER, JP
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 2030 - 2033