ANISOTROPY OF GRAIN-GROWTH IN ALUMINA

被引：99

作者：

RODEL, J

GLAESER, AM

机构：

[1] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV & CHEM SCI,BERKELEY,CA 94720

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1990年 / 73卷 / 11期

关键词：

alumina; anisotropy; grain boundary; grain growth; sapphire;

D O I：

10.1111/j.1151-2916.1990.tb06452.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Grain growth in theoretically dense undoped and MgO‐doped polycrystalline Al2O3 was studied, and average grain‐boundary migration rates were compared with those of a‐plane and c‐plane sapphire during migration into the same undoped and MgO‐doped materials. The results are discussed in terms of a grain‐size‐dependent grain‐boundary mobility‐grain‐boundary energy product, Mbγb. The grainsize dependencies of the Mbγb products for seed and matrix grains differ. Seed orientation appears to affect the nature of solute‐boundary interactions. The importance of grain‐boundary structure on migration characteristics is also indicated by a demonstration of twin‐formation‐enhanced grain growth. Copyright © 1990, Wiley Blackwell. All rights reserved

引用

页码：3292 / 3301

页数：10

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