THE EFFECT OF V/III-RATIO ON THE INITIAL LAYER OF GAAS ON SI

被引：8

作者：

ITOH, Y

SUGOU, M

MORI, H

机构：

[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa 243-01, 3-1, Morinosato, Wakamiya

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 06期

关键词：

D O I：

10.1063/1.350993

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the initial layer of GaAs films grown on Si substrates by a two-step metalorganic chemical vapor deposition method, in which an initial GaAs layer is grown on a Si substrate at low temperature. It was found that the V/III ratio during the growth of the initial layer plays a key role in improving the quality of GaAs film on a Si substrate. The initial GaAs layer grows two dimensionally as a continuous film when it is grown at a low V/III ratio.

引用

页码：3050 / 3052

页数：3

共 14 条

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