HIGH CRITICAL CURRENT DENSITIES IN YBA2CU3O7-X THIN-FILMS FORMED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION AT 730-DEGREES-C

被引：45

作者：

LI, YQ ^{[1
]}

ZHAO, J ^{[1
]}

CHERN, CS ^{[1
]}

HUANG, W ^{[1
]}

KULESHA, GA ^{[1
]}

LU, P ^{[1
]}

GALLOIS, B ^{[1
]}

NORRIS, P ^{[1
]}

KEAR, B ^{[1
]}

COSANDEY, F ^{[1
]}

机构：

[1] EMCORE CORP,SOMERSET,NJ 08873

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 06期

关键词：

D O I：

10.1063/1.104557

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

YBa2Cu3O7-x superconducting thin films with a critical current density of 2.3 x 10(6) A/cm2 at 77.7 K and 0 T were prepared by a metalorganic chemical vapor deposition process. The films were formed in situ on LaAlO3 at a substrate temperature of 730-degrees-C in 2 Torr partial pressure of N2O. Resistivity and magnetic susceptibility measurements of the as-deposited films show a sharp superconducting transition temperature of 89 K with a narrow width of less than 1 K. Critical current densities were measured by the dc transport method with a patterned bridge of 120-mu-m x 40-mu-m. Both x-ray diffraction and high-resolution electron microscopy measurements indicate that films grew epitaxially with the c axis perpendicular to the surface of the substrate.

引用

页码：648 / 650

页数：3

共 20 条

[11] PROCESSING TECHNIQUES FOR THE 93-K SUPERCONDUCTOR BA2YCU3O7
MURPHY, DW
JOHNSON, DW
JIN, S
HOWARD, RE
[J]. SCIENCE, 1988, 241 (4868) : 922 - 930
[12] SCHUEGRAF KK, 1988, HDB THIN FILM DEPOSI, P276
[13] TSURUOKA T, 1989, JPN J APPL PHYS, V28, P607
[14] HIGH CRITICAL CURRENTS IN EPITAXIAL YBA2CU3O7-X THIN-FILMS ON SILICON WITH BUFFER LAYERS
WU, XD
INAM, A
HEGDE, MS
WILKENS, B
CHANG, CC
HWANG, DM
NAZAR, L
VENKATESAN, T
MIURA, S
MATSUBARA, S
MIYASAKA, Y
SHOHATA, N
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (08) : 754 - 756
[15] HIGH CRITICAL-CURRENT DENSITY OF Y-BA-CU-O SUPERCONDUCTING FILMS PREPARED BY CVD
YAMANE, H
KUROSAWA, H
HIRAI, T
WATANABE, K
IWASAKI, H
KOBAYASHI, N
MUTO, Y
[J]. SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 1989, 2 (02) : 115 - 117
[16] Y-BA-CU-O SUPERCONDUCTING FILMS PREPARED ON SRTIO3 SUBSTRATES BY CHEMICAL VAPOR-DEPOSITION
YAMANE, H
MASUMOTO, H
HIRAI, T
IWASAKI, H
WATANABE, K
KOBAYASHI, N
MUTO, Y
KUROSAWA, H
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (16) : 1548 - 1550
[17] VUV FLUORESCENCE FOLLOWING PHOTO-DISSOCIATION OF N2O AT 193 NM
ZAVELOVICH, J
ROTHSCHILD, M
GORNIK, W
RHODES, CK
[J]. JOURNAL OF CHEMICAL PHYSICS, 1981, 74 (12) : 6787 - 6791
[18] DEPOSITION OF HIGH-TC SUPERCONDUCTING Y-BA-CU-O THIN-FILMS AT LOW-TEMPERATURES USING A PLASMA-ENHANCED ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION APPROACH
ZHAO, J
MARCY, HO
TONGE, LM
WESSELS, BW
MARKS, TJ
KANNEWURF, CR
[J]. SOLID STATE COMMUNICATIONS, 1990, 74 (10) : 1091 - 1094
[19] ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION OF HIGH-TC SUPERCONDUCTING FILMS USING A VOLATILE, FLUOROCARBON-BASED PRECURSOR
ZHAO, J
DAHMEN, KH
MARCY, HO
TONGE, LM
MARKS, TJ
WESSELS, BW
KANNEWURF, CR
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (18) : 1750 - 1752
[20] LOW-TEMPERATURE INSITU FORMATION OF Y-BA-CU-O HIGH-TC SUPERCONDUCTING THIN-FILMS BY PLASMA-ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION
ZHAO, J
NOH, DW
CHERN, C
LI, YQ
NORRIS, P
GALLOIS, B
KEAR, B
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (23) : 2342 - 2344

← 1 2 →