INGAAS-GAAS-INGAP CHANNEL GUIDE STRAINED QUANTUM-WELL LASERS WITH OUTPUT POWERS OVER 300 MW

被引：8

作者：

SIN, YK

HORIKAWA, H

YAMADA, K

KAMIJOH, T

机构：

[1] Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd., Tokyo 193, 550-5, Higashiasakawa Hachioji

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 13期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920779

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Device results are reported from channel guide InGaAs-GaAs strained quantum well lasers (lambda(L) = 980 nm) with In0.49Ga0.51P cladding layers. AR-HR coated channel guide lasers with a p-n-p InGaP current blocking junction on a p+-GaAs substrate show high output powers of 302 m W which is the highest output power obtained from InGaAs-GaAs-InGaP lasers.

引用

页码：1234 / 1235

页数：2

共 4 条

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