EFFECT OF NEUTRON AND GAMMA-IRRADIATION ON LOW-FREQUENCY NOISE IN GAAS MESFETS

被引：3

作者：

MOGHE, SB

GUTMANN, RJ

CHUDZICKI, MJ

BORREGO, JM

机构：

来源：

ELECTRONICS LETTERS | 1978年 / 14卷 / 19期

关键词：

D O I：

10.1049/el:19780428

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：637 / 639

页数：3

共 8 条

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ELECTRONICS LETTERS, 1976, 12 (12) :297-298

[2]

BORREGO JM, 1978, 1978 IEEE ANN C NUCL

[3]

CHAFFIN RJ, 1973, MICROWAVE SEMICONDUC, pCH5

[4] CHANGE OF SOME PROPERTIES OF JUNCTION FIELD-EFFECT TRANSISTORS AFTER IONIZING IRRADIATION [J].

DEHMEL, G ;

BRAUNIG, D .

ELECTRONICS LETTERS, 1977, 13 (20) :601-603

[5] LOW-FREQUENCY NOISE IN GAAS SCHOTTKY-GATE FETS [J].

GRAFFEUIL, J ;

CAIMINADE, J .

ELECTRONICS LETTERS, 1974, 10 (13) :266-268

[6] G-R NOISE AND MICROSCOPIC DEFECTS IN IRRADIATED JUNCTION FIELD-EFFECT TRANSISTORS [J].

KRISHNAN, IN ;

CHEN, TM .

SOLID-STATE ELECTRONICS, 1977, 20 (11) :897-906

[7]

Pucel RA, 1975, ADV ELECTRONICS ELEC, V38, P195, DOI DOI 10.1016/S0065-2539(08)61205-6

[8] GENERATION-RECOMBINATION NOISE IN CHANNEL OF GAAS SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS [J].

SODINI, D ;

TOUBOUL, A ;

LECOY, G ;

SAVELLI, M .

ELECTRONICS LETTERS, 1976, 12 (02) :42-43

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